High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00024-12-P-4092
Agency Tracking Number: N121-071-1041
Amount: $149,960.00
Phase: Phase I
Program: SBIR
Awards Year: 2012
Solicitation Year: 2012
Solicitation Topic Code: N121-071
Solicitation Number: 2012.1
Small Business Information
3400 Industrial Lane, Unit 7, Broomfield, CO, -
DUNS: 100363857
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ofer Sneh
 Director of Technology
 (303) 466-2341
 ofer@sundewtech.com
Business Contact
 Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Research Institution
 Stub
Abstract
This proposal targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher dielectric constant substitution for currently used dielectric layers, integrated with metal electrodes. Higher voltage capacitors will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.

* Information listed above is at the time of submission. *

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