High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$149,960.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
N00024-12-P-4092
Award Id:
n/a
Agency Tracking Number:
N121-071-1041
Solicitation Year:
2012
Solicitation Topic Code:
N121-071
Solicitation Number:
2012.1
Small Business Information
3400 Industrial Lane, Unit 7, Broomfield, CO, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
100363857
Principal Investigator:
OferSneh
Director of Technology
(303) 466-2341
ofer@sundewtech.com
Business Contact:
AnatSneh
Vice President
(303) 466-2341
anat@sundewtech.com
Research Institute:
Stub




Abstract
This proposal targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project objective is to provide a higher dielectric constant substitution for currently used dielectric layers, integrated with metal electrodes. Higher voltage capacitors will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems and commercial products.

* information listed above is at the time of submission.

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