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Planar, Low Switching Loss, Gallium Nitride Devices for Power Conversion Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-12-M-0293
Agency Tracking Number: N121-090-1138
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N121-090
Solicitation Number: 2012.1
Solicitation Year: 2012
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-05-07
Award End Date (Contract End Date): 2013-09-06
Small Business Information
22 Centre St. Unit 4
Cambridge, MA -
United States
DUNS: 078360128
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Tomas Palacios
 (617) 710-7013
Business Contact
 Tomas Palacios
Title: Director
Phone: (617) 710-7013
Research Institution

Cambridge Electronics will develop a new generation of power electronic switches based on gallium nitride (GaN) semiconductors. These switches will be optimized for 1000-V operation and switching frequencies in excess of 1 MHz. To maximize the device performance, this project will demonstrate a new fabrication technology that significantly increases the breakdown voltage of GaN transistors and reduces their leakage current and on resistance. The threshold voltage of these devices will be in excess of 1 V.

* Information listed above is at the time of submission. *

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