Normally-OFF AlInN/GaN MISHFET with composite channel

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$79,938.00
Award Year:
2012
Program:
SBIR
Phase:
Phase I
Contract:
N00014-12-M-0173
Agency Tracking Number:
N121-090-1221
Solicitation Year:
2012
Solicitation Topic Code:
N121-090
Solicitation Number:
2012.1
Small Business Information
Sensor Electronic Technology, Inc.
1195 Atlas Road, Columbia, SC, 29201
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
135907686
Principal Investigator:
Mikhail Gaevski
Senior Scientist
(803) 647-9757
mgaevski@s-et.com
Business Contact:
Remis Gaska
President and CEO
(803) 647-9757
gaska@s-et.com
Research Institution:
Stub




Abstract
We propose to develop new key building blocks for next generation power electronics based on III-Nitride semiconductor technology. High-voltage, low-loss, normally-off III-Nitride insulated gate heterostructure field-effect transistor (MISHFET) is based on innovative and patent-pending composite-channel design, which monolithically integrates normally-off and normally-on sections sharing the same two-dimensional electron gas (2DEG) channel. This new technology uses strain-free AlInN/GaN heterostructures to obtain record low sheet and channel resistance and, thus, to significantly improve the fundamental on-resistance breakdown voltage relationship compared to Si, SiC, and GaN. New device employs high quality SiN gate insulator to reduce leakage current, treatment process for threshold voltage adjustment and the deposition of low-conducting layer to reduce the device capacitance and eliminate electric field peaks. The novel device will allow fabricating 1kV 50A range power converters with conversion efficiency above 90% and conversion frequency above 1 MHz. The highly controllable growth and fabrication processes will ensure high yield exceeding at least 60%. The use of technologies and manufacturing capabilities readily available at the proposer"s facilities guaranties rapid commercialization and insertion of these novel devices leading to transformative changes in the power converters employed by the US NAVY, other DoD branches and in a broad range of commercial applications.

* information listed above is at the time of submission.

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