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Radiation-Hardened, Resistive Random Access Memory

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-12-C-0113
Agency Tracking Number: F103-093-1784
Amount: $749,919.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: AF103-093
Solicitation Number: 2010.3
Timeline
Solicitation Year: 2010
Award Year: 2012
Award Start Date (Proposal Award Date): 2012-08-15
Award End Date (Contract End Date): N/A
Small Business Information
1415 Bond St. #111
Naperville, IL -
United States
DUNS: 844118195
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Patti
 CTO
 (630) 505-0404
 rpatti@tezzaron.com
Business Contact
 Robert Patti
Title: CTO
Phone: (630) 505-0404
Email: rpatti@tezzaron.com
Research Institution
 Stub
Abstract

ABSTRACT: Tezzaron proposes to develop and demonstrate a 64Mb 3D integrated MRAM device comprising one non-volatile memory cell layer and one radiation hardened I/O logic and control layer. This memory device will address the industry"s next generation needs for nonvolatile memory density and also, because of its virtually unlimited wearout lifetime, act as next main memory, reducing overall component count, size, weight and power. The device will have the capacity for expansion up to 1Gb with the addition of more memory cell layers. This program will ultimately produce components for use in space-based systems as well as other DoD systems. BENEFIT: The proposed device significantly increases the density of aerospace/space/military hardened non-volatile memory. The MRAM memory device at the new propose range of device capacities to 1Gb would also allow consolidation of the volatile and non-volatile memories reducing board space and power. This provides fundementally increased computing capability for space applications.

* Information listed above is at the time of submission. *

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