Radiation-Hardened, Resistive Random Access Memory

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$749,919.00
Award Year:
2012
Program:
SBIR
Phase:
Phase II
Contract:
FA9453-12-C-0113
Agency Tracking Number:
F103-093-1784
Solicitation Year:
2010
Solicitation Topic Code:
AF103-093
Solicitation Number:
2010.3
Small Business Information
Tezzaron Semiconductor Corp.
1415 Bond St., #111, Naperville, IL, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
844118195
Principal Investigator:
Robert Patti
CTO
(630) 505-0404
rpatti@tezzaron.com
Business Contact:
Robert Patti
CTO
(630) 505-0404
rpatti@tezzaron.com
Research Institution:
Stub




Abstract
ABSTRACT: Tezzaron proposes to develop and demonstrate a 64Mb 3D integrated MRAM device comprising one non-volatile memory cell layer and one radiation hardened I/O logic and control layer. This memory device will address the industry"s next generation needs for nonvolatile memory density and also, because of its virtually unlimited wearout lifetime, act as next main memory, reducing overall component count, size, weight and power. The device will have the capacity for expansion up to 1Gb with the addition of more memory cell layers. This program will ultimately produce components for use in space-based systems as well as other DoD systems. BENEFIT: The proposed device significantly increases the density of aerospace/space/military hardened non-volatile memory. The MRAM memory device at the new propose range of device capacities to 1Gb would also allow consolidation of the volatile and non-volatile memories reducing board space and power. This provides fundementally increased computing capability for space applications.

* information listed above is at the time of submission.

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