Development of GaN Substrates for High Power and Multi-Functional Devices

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$723,742.00
Award Year:
2012
Program:
SBIR
Phase:
Phase II
Contract:
W911QX-12-C-0048
Award Id:
n/a
Agency Tracking Number:
A2-4518
Solicitation Year:
2009
Solicitation Topic Code:
A09-045
Solicitation Number:
2009.2
Small Business Information
8829 Midway West Road, Raleigh, NC, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Gregory Mulholland
Director
(919) 789-8880
mulholland@kymatech.com
Business Contact:
Carole Davis
Contract Administrator
(919) 789-8880
davis@kymatech.com
Research Institution:
Stub




Abstract
Gallium nitride (GaN) substrates are a critical component in the roadmap of power efficient and high frequency electronic devices in the coming years. One major hurdle of this technology is the limited availability of large diameter, high quality substrates for large scale device fabrication. Under this effort, Kyma will work with partners to produce larger and more device consistent wafers for device proof of concept and testing.

* information listed above is at the time of submission.

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