High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$728,843.00
Award Year:
2012
Program:
SBIR
Phase:
Phase II
Contract:
W56HZV-12-C-0018
Award Id:
n/a
Agency Tracking Number:
A2-4730
Solicitation Year:
2010
Solicitation Topic Code:
A10-132
Solicitation Number:
2010.2
Small Business Information
7 Deer Park Drive,, Suite E, Monmouth Junction, NJ, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
042068101
Principal Investigator:
Petre Alexandrov
Senior Research Engineer
(732) 355-0550
palexandrov@unitedsic.com
Business Contact:
J. Dries
President&CEO
(732) 355-0550
jcdries@unitedsic.com
Research Institution:
Stub




Abstract
During Phase I, USCI developed a compact, high frequency, high temperature, silicon carbide (SiC) gate driver module to control SiC transistor power modules, capable of operation in the temperature range from -40 degrees C to 300 degrees C, based on our innovative 4H-SiC Lateral Junction Field Effect Transistor (LJFET) technology. The system consists of two separate parts (input and output) monolithically integrated on a single chip, using a common substrate, physically isolated from each other and connected through an external transformer to ensure galvanic isolation between the low voltage and high voltage sides. An isolated power supply is also included to form a compact gate driver module, suitable for controlling power switches in DC-DC converters or motor control drives. Three different driver designs were created for three different types of power switches"MOSFET, normally-on JFET, and normally-off JFET. In Phase II we propose to fully develop the Phase I design to produce a dual-channel gate drive module prototype capable of driving a single phase leg consisting of a pair of SiC transistors and SiC diodes. Phase II deliverables will be seven (7) single-phase leg dual-channel SiC gate drive modules developed to TRL 4.

* information listed above is at the time of submission.

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