High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency:
Department of Defense
Amount:
$729,991.00
Program:
SBIR
Contract:
W56HZV-12-C-0007
Solitcitation Year:
2010
Solicitation Number:
2010.2
Branch:
Army
Award Year:
2012
Phase:
Phase II
Agency Tracking Number:
A2-4820
Solicitation Topic Code:
A10-132
Small Business Information
Arkansas Power Electronics International
535 W. Research Center Blvd., Suite 209, Fayetteville, AR, -
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
121539790
Principal Investigator
 Bradley Reese
 Lead Engineer
 (479) 443-5759
 breese@apei.net
Business Contact
 Sharmila Mounce
Title: Business Operations Manag
Phone: (479) 443-5759
Email: smounce@apei.net
Research Institution
 Stub
Abstract
APEI, Inc."s Phase II goal is to develop, fabricate and test a compact, high temperature, high performance isolated gate drivers utilizing HTSOI integrated circuits, discrete SiC devices, and high frequency coreless magnetics. Additionally, leveraging its existing high performance high temperature SiC power modules, APEI, Inc. will integrate the developed gate driver into this SiC power module and demonstrate a complete high temperature intelligent power module by the end of this Phase II.

* information listed above is at the time of submission.

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