High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$729,991.00
Award Year:
2012
Program:
SBIR
Phase:
Phase II
Contract:
W56HZV-12-C-0007
Agency Tracking Number:
A2-4820
Solicitation Year:
2010
Solicitation Topic Code:
A10-132
Solicitation Number:
2010.2
Small Business Information
Arkansas Power Electronics International
535 W. Research Center Blvd., Suite 209, Fayetteville, AR, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
Bradley Reese
Lead Engineer
(479) 443-5759
breese@apei.net
Business Contact:
Sharmila Mounce
Business Operations Manag
(479) 443-5759
smounce@apei.net
Research Institution:
Stub




Abstract
APEI, Inc."s Phase II goal is to develop, fabricate and test a compact, high temperature, high performance isolated gate drivers utilizing HTSOI integrated circuits, discrete SiC devices, and high frequency coreless magnetics. Additionally, leveraging its existing high performance high temperature SiC power modules, APEI, Inc. will integrate the developed gate driver into this SiC power module and demonstrate a complete high temperature intelligent power module by the end of this Phase II.

* information listed above is at the time of submission.

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