In-Vacuo Passivation of High Aspect Ratio HgCdTe Surfaces

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$429,222.00
Award Year:
2012
Program:
SBIR
Phase:
Phase II
Contract:
W909MY-12-C-0006
Award Id:
n/a
Agency Tracking Number:
A2-4926
Solicitation Year:
2010
Solicitation Topic Code:
A10-018
Solicitation Number:
2010.1
Small Business Information
590 Territorial Drive, Suite B, Bolingbrook, IL, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
068568588
Principal Investigator:
Fikri Aqariden
Vice President
(630) 771-0203
contracts@epir.com
Business Contact:
Sivalingam Sivananthan
Chief Executive Officer
(630) 771-0201
ssivananthan@epir.com
Research Institution:
Stub




Abstract
The overall goal of this project is to develop a 100 degrees C temperature ALD CdTe passivation process capable of conformally passivating high aspect ratio surfaces of HgCdTe infrared detectors. The effort is comprised of first establishing the low temperature ALD process, next in fully characterizing the resulting CdTe, then implementing in-situ sample surface preparation, and finally in passivating high aspect ratio HgCdTe samples.

* information listed above is at the time of submission.

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