AGNITRON TECHNOLOGY, INC

Address

6595 EDENVALE BLVD STE 180
EDEN PRAIRIE, MN, 55346-2506

http://www.agnitron.com

Information

DUNS: 054898964
# of Employees: 12

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. A New MOCVD Platform for Commercially Scalable Growth of-Ga2O3 Device Structures

    Amount: $79,957.00

    Future DoD and Navy missions require advances in current high voltage power electronics technology as existing technology and even recent promising advances in Silicon Carbide and Gallium Nitride base ...

    STTRPhase I2016Department of Defense Navy
  2. Solar Blind MgZnO Photodetectors

    Amount: $999,042.00

    This project address the fabrication of solar blind detectors from the MgZnO material system. Both MBE and MOCVD material growth techniques will be used for deposition of the required material layers. ...

    STTRPhase II2014Department of Defense Army
  3. Radiation Hard Multichannel AlN/GaN HEMT for High Efficiency X- and Ka-Band Power Amplifiers

    Amount: $124,928.00

    This project is directed to the development of low-loss, high power-density Aluminum Nitride (AlN)/Gallium Nitride (GaN) heterostructure based transistors for enabling high-efficiency solid state powe ...

    SBIRPhase I2014National Aeronautics and Space Administration
  4. Investigation of Donor and Acceptor Ion Implantation in AlN

    Amount: $149,888.17

    AlN is an attractive material for power electronics device applications due to its wide bandgap and resulting high electric breakdown field. One of the major challenges that need to be addressed to ac ...

    SBIRPhase I2014Department of Energy
  5. Solar Blind MgZnO Photodetectors

    Amount: $149,590.00

    This Phase I program is focused on enhancement of the performance of MgZnO based solar blind detectors. MgZnO alloys have superior optoelectronic properties with bandgaps suitable for solar blind dete ...

    STTRPhase I2013Army Department of Defense
  6. SBIR Phase I: Novel Heterostructure Doping for Optoelectronic Devices

    Amount: $150,000.00

    This Small Business Innovation Research (SBIR) Phase I project addresses the development of a novel technique for improving the efficiency of ultraviolet (UV) light emitting devices (LEDs). The UV LED ...

    SBIRPhase I2013National Science Foundation

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