Low Cost High Reproducibility Method for GaN Seed Production

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$150,000.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
DE-FG02-13ER90631
Award Id:
n/a
Agency Tracking Number:
83640
Solicitation Year:
2013
Solicitation Topic Code:
11 a
Solicitation Number:
DE-FOA-0000760
Small Business Information
8829 Midway West Road, Raleigh, NC, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
EdwardPreble
Dr.
(919) 789-8880
preble@kymatech.com
Business Contact:
HeatherSplawn
Dr.
() -
splawn@kymatech.com
Research Institute:
Stub




Abstract
Although several critical energy saving technologies under development today require Gallium Nitride (GaN) based semiconductor devices, a source of high quality and inexpensive GaN wafers does not yet exist. This lack of GaN wafers adds complexity to GaN device production and makes development of new GaN device based products slower and more costly. Lowest cost, highest volume, wafer production approach is to expand high quality GaN seed wafers into large crystal boules which can then be sliced into hundreds of individual wafers. Though GaN seeds exist, their production is the primary industry bottleneck due to low yield processes ( & lt;20%) or low growth-rate processes (5-10um/hour). Kyma Technologies, in cooperation with Sandia National Laboratory, proposes to develop a new low-cost, high-yield, GaN Seed Wafer production technology. Templates will be produced by Sandia that will enable fast cycle time seed production runs at Kyma. Phase 1 will develop a high yield GaN Seed Wafer process and Phase 2 will improve seed quality, size, and begin GaN boule production processes. Commercial Applications and Other Benefits: High-volume low-cost seeds will enable cost reductions of GaN wafers of 40-99% because inexpensive GaN seed wafers will enable GaN boule growth with acceptable yields. GaN based devices will all have simpler growth processes and higher performance.

* information listed above is at the time of submission.

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