FLAAT Growth Technology for Low Cost Thick High Quality GaN on Thin 8 Sapphir

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$140,183.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
DE-FG02-13ER90632
Award Id:
n/a
Agency Tracking Number:
84412
Solicitation Year:
2013
Solicitation Topic Code:
11 b
Solicitation Number:
DE-FOA-0000760
Small Business Information
8829 Midway West Road, Raleigh, NC, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
EdwardPreble
Dr.
(919) 789-8880
preble@kymatech.com
Business Contact:
HeatherSplawn
Dr.
() -
splawn@kymatech.com
Research Institute:
Stub




Abstract
Gallium Nitrides (GaN) device market size is second only to silicon and is projected to be $50-100 billion in size as markets mature for GaN power devices, solid state lighting, and hundreds of other new applications. Even with this remarkable forecast, GaN epitaxy is still produced primarily on foreign (non-GaN) substrates, typically sapphire, silicon, or silicon carbide, which cause billions of defects and result in extreme bow when one tries to grow thick GaN in order to reduce the defect density. Therefore, wafer bow is a primary roadblock to the reduction of defects in heteroepitaxial growth of GaN when trying to increase device yields, performance, reliability, and ultimately to reduce the cost of these devices to consumers. Kyma has developed FLAAT epitaxy, which stands for Flat Layers At All Temperatures. Any bow that a FLAAT GaN template has (even zero bow) stays constant when heated from 25C to 1000C, which enables 75% thinner 2-12 sapphire, 100m+ GaN with low defect density, and direct MOCVD deposition of devices on clean, epi-ready, and sub-nanometer roughness surfaces. Commercial Applications and Other Benefits: Low-cost, high quality GaN on thin 8 sapphire will drop production costs and increase throughput of GaN based power devices and LEDs by more than 10x.

* information listed above is at the time of submission.

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