Radiation Hard GaInP Photomultiplier Chip(TM)

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-FG02-13ER90563
Agency Tracking Number: 84283
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2013
Solicitation Year: 2013
Solicitation Topic Code: 37 b
Solicitation Number: DE-FOA-0000760
Small Business Information
P.O. Box 30198, Chevy Chase, MD, 20824-0198
DUNS: 089164565
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Eric Harmon
 (508) 809-9052
Business Contact
 Jared Bowling
Title: Mr.
Phone: () -
Email: bowling@lightspintech.com
Research Institution
LightSpin Technologies, Inc. proposes to develop radiation-hard GaInP Photomultiplier Chips. GaInP is extraordinarily radiation hard, capable of withstanding at least 100,000-fold higher radiation flux than silicon. LightSpins GaInP Photomultiplier Chip technology enables the production of GaInP photon detectors with high gain, low noise, fast rise/fall times, and wide dynamic range across photosensitive areas up to 1 cm2. A GaInP Photomultiplier Chip is capable of both single photon detection and excellent photon number resolving, with high detection efficiency for both ultraviolet and visible light photons. Some of the specialized photodetectors used in high energy physics experiments are bombarded by a high flux of high energy particles particles. 70 million times more energetic than those detected in medical X-rays yet the detectors need to remain extremely sensitive for years despite this hellish dose of particles. Over time, these energetic particles damage the photodetectors, causing defects that ruin performance. Next generation high energy physics experiments plan upgrades to increase the radiation flux, resulting in higher damage rates that are expected to cause most solid-state photodetectors to fail. LightSpin is developing an intrinsically radiation-hard GaInP Photomultiplier Chip. GaInP is predicted to be more 100,000s of times more radiation hard than silicon, capable of withstanding extremely high irradiation fluxes. Unlike exotic approaches using diamond, GaN, or SiC, LightSpins GaInP Photomultiplier ChipTM is an efficient detector of the light emitted by most scintillators, is inexpensive, and is readily produced on high volume/low cost GaAs substrates. LightSpins innovative Photomultipiler ChipTM technology provides single photon sensitivity and wide dynamic range, ideally matched to scintillators emitting between 280 and 650 nm. Commercial Applications and Other Benefits: LightSpins GaInP Photomultiplier Chip provides an affordable, fast, large area, solid-state detector solution with single-photon sensitivity and wide dynamic range. The low noise and high speed of the GaInP Photomultiplier ChipTM make it an ideal replacement for the 100-year-old vacuum photomultiplier tube (PMT) in a wide range of commercial applications, including scientific instruments, biomedical instruments, positron emission tomography (PET), and remote sensing applications. The GaInP Photomultiplier ChipTM can directly address the majority of the $0.5 billion PMT market, enabling improved performance, cost, size, and reliability.

* Information listed above is at the time of submission. *

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