Improving Ion Source Antenna Lifetime for the Spallation Neutron Source

Award Information
Agency:
Department of Energy
Amount:
$149,891.00
Program:
SBIR
Contract:
DE-FG02-13ER90606
Solitcitation Year:
2013
Solicitation Number:
DE-FOA-0000760
Branch:
N/A
Award Year:
2013
Phase:
Phase I
Agency Tracking Number:
83514
Solicitation Topic Code:
04 b
Small Business Information
Tech-x Corporation
5621 Arapahoe Ave, Boulder, CO, 80303-1379
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
806486692
Principal Investigator
 Seth Veitzer
 Dr.
 (720) 974-1848
 veitzer@txcorp.com
Business Contact
 Laurence Nelson
Title: Mr.
Phone: () -
Email: lnelson@txcorp.com
Research Institution
 Stub
Abstract
Robust H ion sources are a key component for the Spallation Neutron Source at ORNL. Antennas used to produce H ions often fail when plasma heats the protective insulating coating on the antennas, exposing the bare metal and causing structural failure. Reducing antenna failures, which are expensive and reduce the operating capability of the source, is the top priority of the SNS H Source Program at ORNL. Our numerical modeling of the plasma interaction with insulating surfaces in the H source will provide an optimization of antenna design that will reduce antenna failure for the SNS. We propose to use high-performance computing software packages Vorpal and Nautilus to perform innovative simulations of plasma interactions with rf antennas in ion sources such as the one in use at SNS. We will use novel modeling capabilities to develop accurate simulations that are otherwise not achievable using traditional Particle-In-Cell plasma simulation algorithms. We plan to develop specialized software modules that will allow researchers to easily model rf ion sources and other plasma devices and take advantage of high-performance computing to optimize plasma device designs. Commercial Applications and Other Benefits: As detailed in the commercialization plan, the ability to optimize plasma device design using computer models will help researchers and industrial companies in a number of fields, including ion source fabrication, ion implantation for the semiconductor industry, plasma processing, and thin film deposition. Researchers doing neutron scattering science at the SNS will also benefit from increased reliability as a result of reducing ion source downtime due to antenna failures at the facility.

* information listed above is at the time of submission.

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