High Efficiency 808 nm Laser Pump Diode Arrays with Excellent Beam Quality

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-13-C-0075
Agency Tracking Number: N122-112-0734
Amount: $79,115.00
Phase: Phase I
Program: SBIR
Awards Year: 2013
Solicitation Year: 2012
Solicitation Topic Code: N122-112
Solicitation Number: 2012.2
Small Business Information
Laser Operations, LLC
15632 Roxford St., Sylmar, CA, -
DUNS: 830938051
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jeffrey Ungar
 Chief Technology Officer
 (818) 986-0000
 jungar@qpclasers.com
Business Contact
 Ivalee Francia
Title: Controller
Phone: (818) 986-0000
Email: ifrancia@qpclasers.com
Research Institution
 Stub
Abstract
As part of an effort funded by HEL-JTO, we recently demonstrated advanced quantum well diode laser designs with enhanced confinement operating at 1500 nm that substantially advanced the state-of-the-art with regard to efficiency, high operating temperature and beam quality. Similar enhanced confinement designs will be implemented at 808 nm to greatly improve both electrical-to-optical efficiency and fiber-coupling efficiency. Moreover, by incorporating monolithic internal diffraction gratings in these lasers, linewidths and wavelength tolerances can be reduced by roughly a factor of 4 compared to standard pump diodes without incurring the cost and complication of external volume bragg grating stabilizers.

* information listed above is at the time of submission.

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