High Efficiency 808 nm Laser Pump Diode Arrays with Excellent Beam Quality

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$79,115.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
N68335-13-C-0075
Agency Tracking Number:
N122-112-0734
Solicitation Year:
2012
Solicitation Topic Code:
N122-112
Solicitation Number:
2012.2
Small Business Information
Laser Operations, LLC
15632 Roxford St., Sylmar, CA, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
830938051
Principal Investigator:
Jeffrey Ungar
Chief Technology Officer
(818) 986-0000
jungar@qpclasers.com
Business Contact:
Ivalee Francia
Controller
(818) 986-0000
ifrancia@qpclasers.com
Research Institution:
Stub




Abstract
As part of an effort funded by HEL-JTO, we recently demonstrated advanced quantum well diode laser designs with enhanced confinement operating at 1500 nm that substantially advanced the state-of-the-art with regard to efficiency, high operating temperature and beam quality. Similar enhanced confinement designs will be implemented at 808 nm to greatly improve both electrical-to-optical efficiency and fiber-coupling efficiency. Moreover, by incorporating monolithic internal diffraction gratings in these lasers, linewidths and wavelength tolerances can be reduced by roughly a factor of 4 compared to standard pump diodes without incurring the cost and complication of external volume bragg grating stabilizers.

* information listed above is at the time of submission.

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