High Efficiency 808-nm VCSEL Arrays with Excellent Beam Quality

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$79,938.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
N68335-13-C-0077
Agency Tracking Number:
N122-112-1033
Solicitation Year:
2012
Solicitation Topic Code:
N122-112
Solicitation Number:
2012.2
Small Business Information
nLight Photonics
WA, Vancouver, WA, 98665-0990
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
799811646
Principal Investigator:
Zhigang Chen
Principal Investigator
(360) 566-4460
zhigang.chen@nlight.net
Business Contact:
Huimin Huang
Staff Accountant
(360) 566-4460
huimin.huang@nlight.net
Research Institution:
Stub




Abstract
Today"s high energy Q-switched Nd:YAG lasers are often pumped by stacks of multiple edge-emitting diode laser bars since the vertical-cavity surface-emitting laser (VCSEL) traditionally have been lower in efficiency. In this effort we are proposing a novel VCSEL design which overcomes the efficiency bottleneck in conventional VCSEL while preserving its beneficial attributes such as uniform beam in the far-field, higher brightness, narrow spectral width, less sensitivity to thermal drift in center wavelength and lower cost of manufacturing. Under the proposed program, nLight will develop and demonstrate a high power, high efficiency and high beam quality VCSEL array near 808 nm, with efficiency compared to the state-of-the-art edge-emitting diode laser bars. nLight will achieve this by leveraging its industry-leading high efficiency 808-nm epitaxy design, and incorporating a cascaded bipolar VCSEL design. The end goal of the program is to achieve>60% wallplug efficiency and>1 kW QCW optical power in a 0.5 cm2 high power VCSEL array, with a spectral width less than 1 nm and a temperature coefficient of lower than 0.1 nm/°C.

* information listed above is at the time of submission.

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