High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$137,979.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
N00014-13-M-0034
Award Id:
n/a
Agency Tracking Number:
N122-135-0058
Solicitation Year:
2012
Solicitation Topic Code:
N122-135
Solicitation Number:
2012.2
Small Business Information
677 River Oaks Pkwy, San Jose, CA, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
060635247
Principal Investigator:
DonDisney
Senior Director of Techno
(408) 684-5223
don@epowersoft.com
Business Contact:
IsikKizilyalli
Chief Executive Officer
(408) 684-5209
isik@epowersoft.com
Research Institute:
Stub




Abstract
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.

* information listed above is at the time of submission.

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