High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

Award Information
Agency:
Department of Defense
Amount:
$137,979.00
Program:
SBIR
Contract:
N00014-13-M-0034
Solitcitation Year:
2012
Solicitation Number:
2012.2
Branch:
Navy
Award Year:
2013
Phase:
Phase I
Agency Tracking Number:
N122-135-0058
Solicitation Topic Code:
N122-135
Small Business Information
Avogy, Inc.
677 River Oaks Pkwy, San Jose, CA, -
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
060635247
Principal Investigator
 Don Disney
 Senior Director of Techno
 (408) 684-5223
 don@epowersoft.com
Business Contact
 Isik Kizilyalli
Title: Chief Executive Officer
Phone: (408) 684-5209
Email: isik@epowersoft.com
Research Institution
 Stub
Abstract
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.

* information listed above is at the time of submission.

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