High Power Vertical Gallium Nitride (GaN) Transistors on Native GaN Substrates for Power Switching Applications

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-13-M-0034
Agency Tracking Number: N122-135-0058
Amount: $137,979.00
Phase: Phase I
Program: SBIR
Awards Year: 2013
Solicitation Year: 2012
Solicitation Topic Code: N122-135
Solicitation Number: 2012.2
Small Business Information
677 River Oaks Pkwy, San Jose, CA, -
DUNS: 060635247
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Don Disney
 Senior Director of Techno
 (408) 684-5223
Business Contact
 Isik Kizilyalli
Title: Chief Executive Officer
Phone: (408) 684-5209
Email: isik@epowersoft.com
Research Institution
Avogy has a unique approach to producing vertical GaN-on-GaN power devices that have fundamental advantages over silicon, silicon carbide, and lateral GaN devices. With this SBIR funding, we will demonstrate the feasibility of a normally-off vertical GaN transistor with a blocking voltage over 5000V, a threshold voltage greater than 1V, and specific on-resistance less than 30 mohm-cm2.

* Information listed above is at the time of submission. *

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