Counterfeit Semiconductor Detection using Electromagnetic Emission Anomaly Analysis

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-13-C-7327
Agency Tracking Number: B122-026-0427
Amount: $100,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2013
Solicitation Year: 2012
Solicitation Topic Code: MDA12-026
Solicitation Number: 2012.2
Small Business Information
GMATEK, Inc.
3 Church Circle, Suite 266, Annapolis, MD, -
DUNS: 800545043
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 R. Wright
 President
 (443) 306-3387
 glenn@gmatek.com
Business Contact
 Magdalena Wright
Title: Vice President
Phone: (443) 306-3387
Email: magda@gmatek.com
Research Institution
 Stub
Abstract
This project involves research and development of an instrument capable of rapidly distinguishing between counterfeit and authentic semiconductor components. A side benefit is that it can also identify failed semiconductors. Non-contact measurement techniques are used to acquire electromagnetic field emissions generated by all electronic components that are powered-up and stimulated. Counterfeit semiconductors can be detected due to counterfeiting methods and processes that result in measurable differences in internal electronic signals, crosstalk characteristics and electromagnetic field emissions as compared to authentic semiconductors. Testing merely requires the operator to install the suspect component in a socket, select the appropriate part number, and initiate the test. Test results, available in seconds, indicate either"authentic","counterfeit"or"failed"within a given range of probability as electromagnetic fields emitted by the suspect component are measured, analyzed, and compared against the electromagnetic emission model of the authentic semiconductor. Hundreds of components could be tested each hour if necessary.

* information listed above is at the time of submission.

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