Compact , High-Power Density, High-Voltage Silicon Carbide (SiC) Based Solid-State Circuit Protection Device (SSCPD) Incorporating Advanced Power Pack

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$99,944.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
W56HZV-13-C-0119
Award Id:
n/a
Agency Tracking Number:
A123-118-0266
Solicitation Year:
2012
Solicitation Topic Code:
A123-118
Solicitation Number:
2012.3
Small Business Information
535 W. Research Center Blvd., Fayetteville, AR, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
DanielMartin
Senior Power Electronics Engineer
(479) 443-5759
dmartin@apei.net
Business Contact:
SharmilaMounce
Business Operations Manager
(479) 443-5759
smounce@apei.net
Research Institute:
Stub




Abstract
This SBIR Phase I project seeks to develop an advanced, flexible, robust, high-power density, high-voltage (600 V), solid-state circuit protection device (SSCPD) through the incorporation of silicon carbide (SiC) device technology, the implementation of advanced power packaging, and novel fault detection and protection schemes. The proposed SiC-based SSCPD will address the present and future needs of many Army applications, specifically targeting the present needs of the Joint Light Tactical Vehicle (JLTV) and other future Army vehicles, e.g., Ground Combat Vehicle (GCV).

* information listed above is at the time of submission.

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