Compact , High-Power Density, High-Voltage Silicon Carbide (SiC) Based Solid-State Circuit Protection Device (SSCPD) Incorporating Advanced Power Pack

Award Information
Agency:
Department of Defense
Branch:
Army
Amount:
$99,944.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
W56HZV-13-C-0119
Agency Tracking Number:
A123-118-0266
Solicitation Year:
2012
Solicitation Topic Code:
A123-118
Solicitation Number:
2012.3
Small Business Information
Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd., Fayetteville, AR, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator
 Daniel Martin
 Senior Power Electronics Engineer
 (479) 443-5759
 dmartin@apei.net
Business Contact
 Sharmila Mounce
Title: Business Operations Manager
Phone: (479) 443-5759
Email: smounce@apei.net
Research Institution
 Stub
Abstract
This SBIR Phase I project seeks to develop an advanced, flexible, robust, high-power density, high-voltage (600 V), solid-state circuit protection device (SSCPD) through the incorporation of silicon carbide (SiC) device technology, the implementation of advanced power packaging, and novel fault detection and protection schemes. The proposed SiC-based SSCPD will address the present and future needs of many Army applications, specifically targeting the present needs of the Joint Light Tactical Vehicle (JLTV) and other future Army vehicles, e.g., Ground Combat Vehicle (GCV).

* information listed above is at the time of submission.

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