An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,969.00
Award Year:
2013
Program:
STTR
Phase:
Phase I
Contract:
HQ0147-13-C-7186
Agency Tracking Number:
B12A-003-0005
Solicitation Year:
2012
Solicitation Topic Code:
MDA12-T003
Solicitation Number:
2012.A
Small Business Information
IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103, Costa Mesa, CA, -
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
830609090
Principal Investigator:
Honnavalli Vydyanath
Chief Scientist
(714) 717-6675
hvydyanath@gmail.com
Business Contact:
Honnavalli Vydyanath
President
(714) 717-6675
hvydyanath@gmail.com
Research Institution:
Rensselaer Polytechnic Institute
Richard E Scammell
110 Eighth Street
Troy, NY, 12180-3590
(518) 276-6281
Nonprofit college or university
Abstract
Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice detectors. Phase I goal is to demonstrate the feasibility of our technology to fabricate photodiodes with cut-off wavelength in excess of 10µm, quantum efficiency exceeding 70% and dark current density less than 50% of that calculated using Rule 07 at long wavelength infrared (LWIR). Phase II effort will focus on the validation of our passivation approach with demonstration of 320x256 and larger format FPAs with much improved performance over the current state of the art.

* information listed above is at the time of submission.

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