An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-13-C-7186
Agency Tracking Number: B12A-003-0005
Amount: $99,969.00
Phase: Phase I
Program: STTR
Awards Year: 2013
Solicitation Year: 2012
Solicitation Topic Code: MDA12-T003
Solicitation Number: 2012.A
Small Business Information
IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103, Costa Mesa, CA, -
DUNS: 830609090
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Honnavalli Vydyanath
 Chief Scientist
 (714) 717-6675
Business Contact
 Honnavalli Vydyanath
Title: President
Phone: (714) 717-6675
Research Institution
 Rensselaer Polytechnic Institute
 Richard E Scammell
 110 Eighth Street
Troy, NY, 12180-3590
 (518) 276-6281
 Nonprofit college or university
Phase I objective is to demonstrate the feasibility of our proposed passivation approach to minimize the dark current noise and improve the quantum efficiency in the GaSb based type II superlattice detectors. Phase I goal is to demonstrate the feasibility of our technology to fabricate photodiodes with cut-off wavelength in excess of 10µm, quantum efficiency exceeding 70% and dark current density less than 50% of that calculated using Rule 07 at long wavelength infrared (LWIR). Phase II effort will focus on the validation of our passivation approach with demonstration of 320x256 and larger format FPAs with much improved performance over the current state of the art.

* information listed above is at the time of submission.

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