Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,994.00
Award Year:
2013
Program:
STTR
Phase:
Phase I
Contract:
HQ0147-13-C-7191
Award Id:
n/a
Agency Tracking Number:
B12A-003-0039
Solicitation Year:
2012
Solicitation Topic Code:
MDA12-T003
Solicitation Number:
2012.A
Small Business Information
1912 NW 67th Place, Gainesville, FL, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
Y
Duns:
024935517
Principal Investigator:
Rajiv Singh
Professor
(352) 334-7270
rksingh@sinmat.com
Business Contact:
Deepika Singh
President and CEO
(352) 334-7237
singh@sinmat.com
Research Institute:
University of Florida
Rajiv Singh
100 Rhines Hall
Gainesville, FL, 32611-6400
(352) 392-1032
Nonprofit college or university
Abstract
Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. Sinmat Inc. proposes a novel chemical mechanical smoothening and passivation process that is expected to lead to ultra-smooth (<2) GaSb epi-ready passivated surface in a reliable consistent manner.

* information listed above is at the time of submission.

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