Innovative Polishing Technology for Fabrication of High Performance Epi-ready GaSb Substrates

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0147-13-C-7191
Agency Tracking Number: B12A-003-0039
Amount: $99,994.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA12-T003
Solicitation Number: 2012.A
Timeline
Solicitation Year: 2012
Award Year: 2013
Award Start Date (Proposal Award Date): 2012-11-01
Award End Date (Contract End Date): 2013-04-30
Small Business Information
1912 NW 67th Place, Gainesville, FL, -
DUNS: 024935517
HUBZone Owned: N
Woman Owned: Y
Socially and Economically Disadvantaged: N
Principal Investigator
 Rajiv Singh
 Professor
 (352) 334-7270
 rksingh@sinmat.com
Business Contact
 Deepika Singh
Title: President and CEO
Phone: (352) 334-7237
Email: singh@sinmat.com
Research Institution
 University of Florida
 Rajiv Singh
 100 Rhines Hall
Gainesville, FL, 32611-6400
 (352) 392-1032
 Nonprofit college or university
Abstract
Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32┬Ám) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. Sinmat Inc. proposes a novel chemical mechanical smoothening and passivation process that is expected to lead to ultra-smooth (<2) GaSb epi-ready passivated surface in a reliable consistent manner.

* Information listed above is at the time of submission. *

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