Adroit Materials

Basic Information

3001 Greyhawk Pl
Apex, NC, 27539-9314

Company Profile

n/a

Additional Details

Field Value
DUNS: 078520364
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 4


  1. Developing Epi-Ready Gallium Nitride Wafer Surfaces

    Amount: $150,000.00

    While acceptable optoelectronics and high power electronic devices have been commercialized on non-native substrates, a change to native III-nitride substrates promises significant improvements in dev ...

    SBIR Phase I 2015 Department of Energy
  2. Development of Mid-UV Semiconductor Laser Diodes

    Amount: $500,000.00

    High quality, strained AlGaN thin films are a prerequisite for low dislocation density active regions of laser structures and effective doping of cladding layers. Based on our recent work and groundbr ...

    SBIR Phase II 2015 Department of DefenseArmyDepartment of Defense
  3. Ion Implantation Processes in AlN for Wide Bandgap Semiconductor Power Devices

    Amount: $150,000.00

    Current and next-generation power systems require power devices that operate at high voltages and high frequencies beyond the reliable operating limit of the present silicon- and silicon carbide-based ...

    STTR Phase I 2014 Department of Energy
  4. Development of Mid-UV Semiconductor Laser Diodes

    Amount: $100,000.00

    High quality, strained AlGaN thin films are a prerequisite for low dislocation density active regions of laser structures and effective doping of cladding layers. Based on our recent work and groundbr ...

    SBIR Phase I 2014 Department of DefenseArmyDepartment of Defense
  5. High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates

    Amount: $375,000.00

    The objective of proposed work is to demonstrate the feasibility of obtaining AlGaN films of any composition with dislocation densities below 1x106 cm-2 on native nitride substrates either by sustaini ...

    STTR Phase II 2013 Department of DefenseArmyDepartment of Defense
  6. High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates

    Amount: $100,000.00

    The objective of proposed work is to demonstrate the feasibility of obtaining AlGaN films of any composition with dislocation densities below 1x106 cm-2 on native nitride substrates either by sustaini ...

    STTR Phase I 2012 ArmyDepartment of DefenseDepartment of Defense

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