Adroit Materials

Address

3001 Greyhawk Pl
Apex, NC, 27539-9314

Information

DUNS: 078520364
# of Employees: 4

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. Development of high-power near-UV semiconductor laser diodes

    Amount: $80,000.00

    The overall objective of the proposed work is to demonstrate the feasibility of electrically pumped, high-efficiency and long-lifetime, near-UV, solid-state laser diodes (LDs) based on AlGaN MQWs grow ...

    SBIRPhase I2016Department of Defense Navy
  2. Development of Mid-UV Semiconductor Laser Diodes

    Amount: $500,000.00

    High quality, strained AlGaN thin films are a prerequisite for low dislocation density active regions of laser structures and effective doping of cladding layers. Based on our recent work and groundbr ...

    SBIRPhase II2015Department of Defense Army
  3. Developing Epi-Ready Gallium Nitride Wafer Surfaces

    Amount: $150,000.00

    While acceptable optoelectronics and high power electronic devices have been commercialized on non-native substrates, a change to native III-nitride substrates promises significant improvements in dev ...

    SBIRPhase I2015Department of Energy
  4. Ion Implantation Processes in AlN for Wide Bandgap Power Devices

    Amount: $1,000,000.00

    Current and next-generation power systems require power devices that operate at high voltages and high frequencies beyond the reliable operating limit of the present silicon- and silicon carbide- base ...

    STTRPhase II2015Department of Energy
  5. Development of Mid-UV Semiconductor Laser Diodes

    Amount: $100,000.00

    High quality, strained AlGaN thin films are a prerequisite for low dislocation density active regions of laser structures and effective doping of cladding layers. Based on our recent work and groundbr ...

    SBIRPhase I2014Department of Defense Army
  6. Ion Implantation Processes in AlN for Wide Bandgap Semiconductor Power Devices

    Amount: $150,000.00

    Current and next-generation power systems require power devices that operate at high voltages and high frequencies beyond the reliable operating limit of the present silicon- and silicon carbide-based ...

    STTRPhase I2014Department of Energy
  7. High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates

    Amount: $375,000.00

    The objective of proposed work is to demonstrate the feasibility of obtaining AlGaN films of any composition with dislocation densities below 1x106 cm-2 on native nitride substrates either by sustaini ...

    STTRPhase II2013Department of Defense Army
  8. High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates

    Amount: $100,000.00

    The objective of proposed work is to demonstrate the feasibility of obtaining AlGaN films of any composition with dislocation densities below 1x106 cm-2 on native nitride substrates either by sustaini ...

    STTRPhase I2012Army Department of Defense

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