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High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency: Department of Defense
Branch: Army
Contract: W56HZV-11-C-0041
Agency Tracking Number: A102-132-0555
Amount: $69,983.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: A10-132
Solicitation Number: 2010.2
Solicitation Year: 2010
Award Year: 2010
Award Start Date (Proposal Award Date): 2010-11-24
Award End Date (Contract End Date): 2011-05-24
Small Business Information
1965 Lycoming Creek Road Suite 205
Williamsport, PA 17701
United States
DUNS: 028856420
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ross Bird
 Principal Investigator
 (570) 322-2700
Business Contact
 Cathy Brooke
Title: Chief Financial Officer
Phone: (570) 322-2700
Research Institution

The proposed modular high temperature Time Domain Isolated (TDI) Driver is a large step forward in technology, enabling the inherent benefits of current SiC switching devices. Designed to operate in the same environment as the switching devices the gate driver can finally be collocated with the SiC MOSFETs and JFETs being driven. Maximized performance at high speeds, precise switching waveforms at the gates, depletion mode JFET capable, and integrated protection feature within the device will deliver the realization of present and future ARMY requirements.

* Information listed above is at the time of submission. *

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