High Temperature Silicon Carbide (SiC) Gate Driver

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,983.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W56HZV-11-C-0041
Award Id:
97957
Agency Tracking Number:
A102-132-0555
Solicitation Year:
n/a
Solicitation Topic Code:
ARMY 10-132
Solicitation Number:
n/a
Small Business Information
1965 Lycoming Creek Road, Suite 205, Williamsport, PA, 17701
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
028856420
Principal Investigator:
Ross Bird
Principal Investigator
(570) 322-2700
rbird@qortek.com
Business Contact:
Cathy Brooke
Chief Financial Officer
(570) 322-2700
cbrooke@qortek.com
Research Institute:
n/a
Abstract
The proposed modular high temperature Time Domain Isolated (TDI) Driver is a large step forward in technology, enabling the inherent benefits of current SiC switching devices. Designed to operate in the same environment as the switching devices the gate driver can finally be collocated with the SiC MOSFETs and JFETs being driven. Maximized performance at high speeds, precise switching waveforms at the gates, depletion mode JFET capable, and integrated protection feature within the device will deliver the realization of present and future ARMY requirements.

* information listed above is at the time of submission.

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