Ultra-fast Broadband Low-cost T/R Switches based on Vanadium Dioxide Metal-insulator Transition Materials

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$79,916.00
Award Year:
2013
Program:
SBIR
Phase:
Phase I
Contract:
N00024-13-P-4570
Agency Tracking Number:
N131-031-0436
Solicitation Year:
2013
Solicitation Topic Code:
N131-031
Solicitation Number:
2013.1
Small Business Information
Metamagnetics Inc.
480 Neponset Street, 12B, Canton, MA, 02021
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
829728067
Principal Investigator:
Andrew Daigle
Senior RF Engineer
(781) 562-0756
adaigle@metamagneticsinc.com
Business Contact:
Elaine Trudell
President
(781) 562-0756
etrudell@metamagneticsinc.com
Research Institution:
n/a
Abstract
Over the course of this small business innovative research (SBIR) phase 1 (Ph1) program Metamagnetics proposes the development of next generation ultra-fast and broadband T/R switches with high isolation (>30 dB) based on thin films of vanadium dioxide (VO2) metal-insulator transition (MIT) materials produced via pulsed laser deposition method. The crystalline uniformity of these films will be strictly monitored via controlled deposition parameters including oxygen pressure, substrate distance from target, and laser power. This will ensure the best quality oxide films as in the fabrication of T/R switches crystalline uniformity as well as the design of the R/F microwave switch have both been shown to be crucial elements of the switching speed and isolation bandwidth performance. In fact, sub pico-second responses have been theorized for VO2 based T/R switches when more efficient RF microwave designs are utilized which is a marked improvement over existing MEMs and GaN T/R switch technologies. Other advantages of switches based on VO2 MIT materials include low fabrication costs, low insertion losses, and high isolation over broad bandwidths of operation. Together, these attribute make the development of VO2 switches based on MIT materials a very attractive solution for next generation T/R switch applications.

* information listed above is at the time of submission.

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