Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$77,868.00
Award Year:
2013
Program:
STTR
Phase:
Phase I
Contract:
N00014-13-P-1184
Award Id:
n/a
Agency Tracking Number:
N13A-025-0190
Solicitation Year:
2013
Solicitation Topic Code:
N13A-T025
Solicitation Number:
2013.A
Small Business Information
11531 Swains Lock Terrace, Potomac, MD, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
964438944
Principal Investigator:
TejbirPhool
President
(301) 651-7259
Tejbirsinghphool@cs.com
Business Contact:
TejbirPhool
President
(301) 651-7259
Tejbirsinghphool@cs.com
Research Institute:
University of California Santa Barb
Umesh Mishra
552 University Rd
Santa Barba, CA, 93106-
(805) 893-3586

Abstract
This research seeks to develop a method of developing solid-state power amplifiers that operate at 300 Volts, achieve 100 Watt output and greater than 90% efficiency at 1 GHz with 10% bandwidths. We will seek to demonstrate switch-mode amplifiers that use a novel gate design with Gallium Nitride forming the basis for solid state power amplification.

* information listed above is at the time of submission.

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