Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications

This project is focused on the development of a new generation of GaN-based transistors with breakdown voltages in excess of 1kV that can be used in the demonstration of power amplifiers operating at 1 GHz with power added efficiencies in excess of 90%. To achieve this performance, this project will develop new approaches to increase the breakdown voltage of GaN high electron mobility transistors, advanced epitaxial structures with minimum current collapse, and improved fabrication technology to reduce the parasitic capacitances of these devices. The device development will be closely coupled to circuit design and simulation to ensure the required record circuit-level performance.