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Thin-Film Multiferroic Heterostructures for Frequency-Agile RF Electronics

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-13-C-0006
Agency Tracking Number: A2-5059
Amount: $374,869.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: A11a-T018
Solicitation Number: 2011.
Timeline
Solicitation Year: 2011
Award Year: 2013
Award Start Date (Proposal Award Date): 2013-05-06
Award End Date (Contract End Date): 2014-04-15
Small Business Information
MA
Woburn, MA 01801-1721
United States
DUNS: 114584175
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Xiaomei Guo
 Sr. Staff Scientist
 (781) 935-2800
 xmguo@bostonati.com
Business Contact
 Y. Zou
Title: President
Phone: (781) 935-2800
Email: kzou@bostonati.com
Research Institution
 University of Minnesota
 Kevin McKoskey
 
450 McNamara Alumni Center 200 Oak Street S.E.
Minneapolis, MN 55455-
United States

 (612) 624-2244
 Nonprofit College or University
Abstract

Microwave technologies have found a broad range of and growing applications, especially in the area of communications. Many microwave tunable devices are bulky and incompatible with RF semiconductor IC technology. The slow tuning response speeds, high material losses, and device noise at higher frequencies have also limited their widespread applications.Recent advances in processing complex oxide and multiferroic thin films present the opportunity for state-of-the-art microwave components. These technologies open the way for establishing electrically tuned ferromagnetic RF resonance devices with reduced bias fields, faster tuning speed, and minimized device size. During Phase I, Boston Applied Technologies Incorporated (BATi) together with University of Minnesota (UMN) have been working diligently on the fabrication and evaluation of multiferroic heterostructures and device designs and simulations. In this Phase II proposal, BATi and UMN propose to continue our efforts on developing and further optimizing high quality multiferroic thin film heterostructures through nano-engineering of interlayers. A prototype of isolator operating at frequencies above 10 GHz, exhibiting low insertion loss, and tunable with moderate electric fields will be fabricated and evaluated.

* Information listed above is at the time of submission. *

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