Packaging High Power Photodetectors for 100 MHz to 100 GHz RF Photonic Applications

Award Information
Agency:
Department of Defense
Amount:
$150,000.00
Program:
SBIR
Contract:
FA8650-13-M-1648
Solitcitation Year:
2013
Solicitation Number:
2013.1
Branch:
Air Force
Award Year:
2013
Phase:
Phase I
Agency Tracking Number:
F131-142-1494
Solicitation Topic Code:
AF131-142
Small Business Information
Discovery Semiconductors, Inc.
119 Silvia Street, Ewing, NJ, -
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
Y
Duns:
824781769
Principal Investigator
 Shubo Datta
 Chief Scientist
 (609) 434-1311
 sdatta@chipsat.com
Business Contact
 Abhay Joshi
Title: President&CEO
Phone: (609) 434-1311
Email: Abhay@chipsat.com
Research Institution
N/A
Abstract
ABSTRACT: Discovery Semiconductors will assemble high power InGaAs/InP photodiodes with 50 ohm internal termination in a fiber-pigtailed, W1-connectorized microwave package having the following specifications: (a) Responsivity>0.7 A/W at 1550 nm wavelength; (b) -3 dB Bandwidth>60 GHz; (c) -9 dB Bandwidth>80 GHz; (d) 1 dB Compression Photocurrent>50 mA @ 60 GHz modulation frequency and>50% modulation depth; and (e) 1 dB Compression Photocurrent Density>0.64 mA/um^2. One packaged device will be delivered each to Lockheed Martin Space Systems Company and Air Force for system level testing. Additionally, packaging techniques for balanced and arrayed photodiodes will be investigated. BENEFIT: The anticipated benefits/applications of this work are :(1) 60 GHz cellular; (2) Hybrid fiber/wireless systems from X-Band to W-Band; (3)Optical phased array radar; and (4)Space systems fiber optic transponders.

* information listed above is at the time of submission.

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