Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8650-13-M-2382
Agency Tracking Number: F131-166-2275
Amount: $149,959.00
Phase: Phase I
Program: SBIR
Awards Year: 2013
Solicitation Year: 2013
Solicitation Topic Code: AF131-166
Solicitation Number: 2013.1
Small Business Information
1195 Atlas Road, Columbia, SC, -
DUNS: 135907686
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Mikhail Gaevski
 Director of Electronics Division
 (803) 647-9757
Business Contact
 Remis Gaska
Title: President and CEO
Phone: (803) 647-9757
Research Institution
ABSTRACT: We propose to develop novel high-temperature robust control ICs compatible with power SiC device using on insulated gate III-Nitride transistors MISHFETs - over SiC native nitride substrate. SET Inc patented GaN MISHFET technology offers radical device performance improvement over SiC MOSFETs and other device types in terms of transconductance and speed of response, due to an extremely high electron sheet density and high electron channel mobility at AlInGaN/GaN heterointerface, the feature not available in SiC technology. Electron concentration and mobility in two two-dimensional channels are remarkably stable within broad temperature range, spanning from cryogenic up to 500°C or even higher. Gate dielectric incorporated into MISHFET design enables low gate leakage currents and is a key feauturesfeature for achieving high reliability in a broad range of operating temperatures. Highly controllable SET Inc. patented MEMOCVDTM MEMOCVD growth and fabrication processes will ensure high MISHFET yield exceeding at 60%. The use of technologies and manufacturing capabilities readily available at the proposer"s facilities guaranties rapid commercialization and system insertion of these novel devices leading to transformative changes in the SiC and other power devices control ICs employed in Air Force and other DoD branches as well as in a broad range of commercial applications. BENEFIT: The successful completion of the proposed Phase I work will yield robust high-temperature GaN MISHFET usable in high-temperature control ICs. The realization of the proposed novel technology will lead to transformative changes in the aircraft electronics significantly increasing the operating temperature of the complex blocks including control circuits and power switches. This will also greatly simplify the system thermal management, reduce the system weight and increase the reliability. The developed control ICs can also be used to operate with other types of power electronic blocks used in different DoD branches as well as in a broad range of commercial applications.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government