Defect Engineering of TlBr for Room Temperature Radiation Detection

Award Information
Agency:
Department of Homeland Security
Branch
n/a
Amount:
$992,258.57
Award Year:
2013
Program:
SBIR
Phase:
Phase II
Contract:
HSHQDC-13-C-00082
Award Id:
n/a
Agency Tracking Number:
DNDOSBIR12-01-FP-004-CAPE-II
Solicitation Year:
2012
Solicitation Topic Code:
12.1-004
Solicitation Number:
HSHQDC-12-R-00052
Small Business Information
6 Huron Drive, Suite 1B, Natick, MA, 01760-1325
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
807651260
Principal Investigator:
William Higgins
(508) 653-7100
higgins@capesym.com
Business Contact:
Shariar Motakef
motakef@capesim.com
Research Institution:
n/a
Abstract
TlBr is a promising gamma radiation semiconductor detector material primarily due to its high Z component and high density. TlBr detectors, however, suffer from polarization at room temperature and degrade rapidly under applied bias. Polarization is associated with ionic conductivity in this material. This proposal is focused on controlling the point, chemical, and crystalline defects in TlBr to minimize ionic conduction, and thereby enable operation of this promising detector at room temperature.

* information listed above is at the time of submission.

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