Ultra-Scalable Nonvolatile Graphene Memory

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-14-M-0053
Agency Tracking Number: F131-082-1232
Amount: $149,696.00
Phase: Phase I
Program: SBIR
Awards Year: 2014
Solicitation Year: 2013
Solicitation Topic Code: AF131-082
Solicitation Number: 2013.1
Small Business Information
2603 Fanelle Circle, Huntsville, AL, -
DUNS: 078375455
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Kevin Brenner
 (256) 508-8833
Business Contact
 Romeil Sandhu
Title: President
Phone: (404) 271-3892
Email: romeil.sandhu@harperlabs.com
Research Institution
ABSTRACT: The physical scalability of Si based nonvolatile memory is problematic for the terascale integration of space memory. In particular and with regards to Flash, this problem is two-fold as device designs breakdown and photolithographic patterning approaches its limits to minimum feature size. Whereas phase-change and ferroelectric polymer devices have shown promise to scale beyond Flash, these technologies face challenges in regards to cost and read-write speed. Molecular electronics, such as the atomically thin carbon found in both carbon nanotubes (CNT) and graphene sheets, exhibit entirely unique electrical properties that can facilitate novel device designs that overcome these challenges. Specifically, the linear energy-momentum (E-k) dispersion in such monolayer carbon gives rise to a number of electrical phenomena not possible in Si, including ultrafine sensitivity and ballistic transport. As such, radiation hardened graphene sheets can overcome the scaling challenges of Si (or III-Nitride) materials through novel device designs. Harper Laboratories, LLC in collaboration with the Georgia Institute of Technology"s Nanotechnology Research Center will continue development on an ultra-scalable nonvolatile graphene memory device. BENEFIT: Nonvolatile memory is a critical technology in support of a variety of space applications. In particular, radiation hardened memory for geosynchronous satellites is of particular significance for the COTM, SBIRS, and AEHF programs as well as weather and environmental tracking satellites. Higher density space-based memory that is more robust will directly enable a more efficient use of satellite infrastructure in support of next generation Air Force programs. As our technology has potential to replace commercial non-volatile memory devices, such as Flash, our device will enable a paradigm shift in commercial memory markets primed by Intel Corporation and SanDisk.

* Information listed above is at the time of submission. *

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