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Atomic Layer Deposition Technology for Gallium Nitride Microwave Monolithic Integrated Circuits

Award Information
Agency: Department of Defense
Branch: Navy
Contract: M67854-14-C-0244
Agency Tracking Number: N121-001-0874
Amount: $998,653.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N121-001
Solicitation Number: 2012.1
Solicitation Year: 2012
Award Year: 2013
Award Start Date (Proposal Award Date): 2013-10-10
Award End Date (Contract End Date): 2016-04-08
Small Business Information
3400 Industrial Lane Unit 7
Broomfield, CO 80020
United States
DUNS: 000000000
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Ofer Sneh
 (303) 466-2341
Business Contact
 Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Research Institution

This project targets the development of a commercially viable silicon-nitride (SiN) Atomic Layer Deposition (ALD) process for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, this project will provide a higher quality substitution for commonly used PEVCD SiN passivation layers. These better passivation layers will enable the development and manufacturing of GaN MMICs with ground-breaking impact on performance, power efficiency, size and cost of many military systems, as well as commercial products. Previously, a large scale survey was used to evaluate multiple possible ALD processes and ALD process conditions. Following the selection of the most promising process, the focus of this project now shifts to process integration, reduced cost and the commercialization of SiN ALD equipment.

* Information listed above is at the time of submission. *

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