Near-infrared, Linear Mode, Photon Counting HgCdTe Focal Plane Arrays

Award Information
Agency:
Department of Defense
Amount:
$99,999.00
Program:
SBIR
Contract:
HQ0006-10-C-7365
Solitcitation Year:
2009
Solicitation Number:
2009.3
Branch:
Missile Defense Agency
Award Year:
2010
Phase:
Phase I
Agency Tracking Number:
B093-038-0248
Solicitation Topic Code:
MDA09-038
Small Business Information
EPIR Technologies Inc
590 Territorial Drive, Suite B, Bolingbrook, IL, 60440
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
068568588
Principal Investigator
 Silviu Velicu
 Director R&D/Senior Scientist
 (630) 771-0203
 svelicu@epir.com
Business Contact
 Sivalingam Sivananthan
Title: President & CEO
Phone: (630) 771-0201
Email: ssivananthan@epir.com
Research Institution
N/A
Abstract
The MDA is developing deployable airborne systems such as the Airborne Laser (ABL) for boost-phase missile defense. The ABL’s mission would significantly benefit from the development of sensors that enhance target detection and ranging capabilities. We propose near-infrared, linear mode, photon counting avalanche photodiode (APD) arrays that are compatible with ABL and based on highly sensitive HgCdTe heterostructure detectors. They offer the advantageous combination of several properties, including staring mode operation, high bandwidth, high quantum efficiencies, low noise, linearity and room temperature operation. The proposed arrays will be fabricated in a lateral current collection device architecture that possesses a larger optical detection area than electrical junction area, and also has the advantages of a reduced dark current and higher resistance than a traditional planar device. In the Phase I effort, we will use a 2D device modeling tool to design, simulate and optimize HgCdTe near-infrared, lateral current collection, photon counting APDs, grow the structures by molecular beam epitaxy, fabricate single element detectors with lithography, perform inductively coupled plasma etching and metal evaporation, and characterize the electrical, optical, gain and noise performance of the sensing detectors.

* information listed above is at the time of submission.

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