SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Award Information
Agency:
National Science Foundation
Amount:
$150,000.00
Program:
SBIR
Contract:
0943961
Solitcitation Year:
2010
Solicitation Number:
NSF 09-541
Branch:
N/A
Award Year:
2010
Phase:
Phase I
Agency Tracking Number:
0943961
Solicitation Topic Code:
NM
Small Business Information
Fairfield Crystal
8 South End Plaza, New Milford, CT, 06776
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
168455116
Principal Investigator
 Shaoping Wang
 PhD
 (860) 354-2111
 swang@fairfieldcrystal.com
Business Contact
 Shaoping Wang
Title: PhD
Phone: (860) 354-2111
Email: swang@fairfieldcrystal.com
Research Institution
N/A
Abstract
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.

* information listed above is at the time of submission.

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