SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$150,000.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
0943961
Award Id:
98752
Agency Tracking Number:
0943961
Solicitation Year:
n/a
Solicitation Topic Code:
AM1
Solicitation Number:
n/a
Small Business Information
8 South End Plaza, New Milford, CT, 06776
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
168455116
Principal Investigator:
ShaopingWang
PhD
(860) 354-2111
swang@fairfieldcrystal.com
Business Contact:
ShaopingWang
PhD
(860) 354-2111
swang@fairfieldcrystal.com
Research Institute:
n/a
Abstract
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.

* information listed above is at the time of submission.

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