SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0943961
Agency Tracking Number: 0943961
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solicitation Year: 2010
Solicitation Topic Code: NM
Solicitation Number: NSF 09-541
Small Business Information
8 South End Plaza, New Milford, CT, 06776
DUNS: 168455116
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Shaoping Wang
 PhD
 (860) 354-2111
 swang@fairfieldcrystal.com
Business Contact
 Shaoping Wang
Title: PhD
Phone: (860) 354-2111
Email: swang@fairfieldcrystal.com
Research Institution
N/A
Abstract
This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.

* Information listed above is at the time of submission. *

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