Novel Growth and Processing of an Extremely High Performance, Low Defect FPAs Utilizing HgCdTe on InSb Substrates

Award Information
Agency: Department of Defense
Branch: Army
Contract: W15P7T-10-C-S202
Agency Tracking Number: A092-094-0694
Amount: $69,998.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solitcitation Year: 2009
Solitcitation Topic Code: A09-094
Solitcitation Number: 2009.2
Small Business Information
Galaxy Compound Semiconductors, Inc.
9922 E. Montgomery #7, Spokane, WA, 99206
Duns: 103905100
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 L. Allen
 Technology Programs Director
 (509) 892-1114
 lisa_allen@alum.mit.edu
Business Contact
 Kevin Blanchat
Title: President
Phone: (509) 892-1114
Email: lacaze@roboticresearch.com
Research Institution
N/A
Abstract
HgCdTe based IR detectors are used in critical military thermal imaging systems and free-space communication. A key component for stealth defense is the megapixel IRFPAs used for fighter aircraft. A significant aspect inhibiting widespread use of HgCdTe for LWIR and VLWIR detectors is the difficulty of obtaining suitably matched large-diameter substrates. Czochralski grown InSb substrates show promise as a substrate for HgCdTe deposition. An opportunity exists to establish a novel proof-of-concept epitaxial growth of HgCdTe on domestic 150mm InSb substrates for use in advanced LWIR/VLWIR FPA applications. The Phase I program will focus on “epi-ready” InSb surface development to facilitate routine HgCdTe MBE growth. Interface stability (InTe precipitates, In pooling) will be examined. The critical milestone will be the demonstration of HgCdTe epi on InSb with EPD

* information listed above is at the time of submission.

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