Indium Surface Preparation for Improved Flip-Chip Hybridization

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$69,930.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W909MY-10-C-0041
Agency Tracking Number:
A101-017-0573
Solicitation Year:
2010
Solicitation Topic Code:
A10-017
Solicitation Number:
2010.1
Small Business Information
Advanced Research Corp.
4459 White Bear Parkway, White Bear Lake, MN, 55110
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
156974024
Principal Investigator:
Greg Wagner
CTO
(651) 789-9000
gwagner@arcnano.com
Business Contact:
Judith Dugas
CFO
(651) 789-9000
jdugas@arcnano.com
Research Institution:
n/a
Abstract
For IR sensors, the sensing detector and readout circuitry (ROIC) are commonly joined on a pixel by pixel level in a process referred to as Hybridization. Hybridization requires bonding an ROIC die and a detector die on a pixel level, where the total number of pixels required to bond and form interconnects ranges from 1,000,000 to 16,000,000 individual pixels. The material of choice for Hybridization is Indium, and the properties of Indium and Indium Oxide play an essential and critical role. Indium Oxide, a ceramic semiconducting material forms naturally in ambient air. This process is thermodynamically favored and occurs spontaneously; therefore all Indium material in ambient air will have a natural layer of Indium Oxide. In order to form adequate electrical contacts during Hybridization, this native Indium Oxide needs to be removed and the Indium passivated to prevent oxide growth. The subject of this proposal is to develop such a solution.

* information listed above is at the time of submission.

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