InGaN High Temperature Photovoltaic Cells

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$599,986.00
Award Year:
2010
Program:
SBIR
Phase:
Phase II
Contract:
NNX10CA41C
Agency Tracking Number:
084269
Solicitation Year:
2008
Solicitation Topic Code:
S3.03
Solicitation Number:
n/a
Small Business Information
Integrated Micro Sensors, Inc.
10814 Atwell Drive, Houston, TX, 77096-4934
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
007189033
Principal Investigator:
Chris Boney
Principal Investigator
(713) 713-7926
cboney@imsensors.com
Business Contact:
David Starikov
Director of Research
(713) 748-7926
dstarikov@imsensors.com
Research Institution:
n/a
Abstract
The objectives of this Phase II project are to develop InGaN photovoltaic cells for high temperature and/or high radiation environments to TRL 4 and to define the development path for the technology to TRL 5 and beyond. The project will include theoretical and experimental refinement of device structures produced in the Phase I, as well as modeling and optimization of solar cell device processing. The devices will be tested under concentrated AM0 sunlight, at temperatures from 100ºC to 250ºC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high temperature / high radiation capable solar cells in NASA space missions.

* information listed above is at the time of submission.

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