Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$70,000.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
W15P7T-10-C-S203
Award Id:
97610
Agency Tracking Number:
A092-094-0571
Solicitation Year:
n/a
Solicitation Topic Code:
Army 09-094
Solicitation Number:
n/a
Small Business Information
1250 E. Collins Blvd., Richardson, TX, 75081
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
059803945
Principal Investigator:
Paul Pinsukanjana
VP of Tech./Bus Dev.
(972) 234-0068
pinsu@intelliepi.com
Business Contact:
Yung-Chung Kao
President/CEO
(972) 234-0068
maki@signatureresearchinc.com
Research Institution:
n/a
Abstract
This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be prepared via production III-V Molecular Beam Epitaxy (MBE) reactor. The 211B InSb substrate is chosen because it''s lattice matched to HgCdTe. Texas State University and Teledyne will assist with the growth of HgCdTe on the especially prepared InSb substrate for evaluation of the InSb substrate preparation. Materials characterization will be performed to evaluate the quality of HgCdTe epi materials grown on InSb. Critical materials development issues will be identified.

* information listed above is at the time of submission.

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