Epi Ready InSb Substrate for HgCdTe Infrared Detectors by MBE

Award Information
Agency:
Department of Defense
Amount:
$70,000.00
Program:
SBIR
Contract:
W15P7T-10-C-S203
Solitcitation Year:
2009
Solicitation Number:
2009.2
Branch:
Army
Award Year:
2010
Phase:
Phase I
Agency Tracking Number:
A092-094-0571
Solicitation Topic Code:
A09-094
Small Business Information
Intelligent Epitaxy Technology, Inc.
1250 E. Collins Blvd., Richardson, TX, 75081
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
059803945
Principal Investigator
 Paul Pinsukanjana
 VP of Tech./Bus Dev.
 (972) 234-0068
 pinsu@intelliepi.com
Business Contact
 Yung-Chung Kao
Title: President/CEO
Phone: (972) 234-0068
Email: maki@signatureresearchinc.com
Research Institution
N/A
Abstract
This Phase I SBIR effort will evaluate the preparation of epi-ready 211B InSb substrate to be used as starting substrate for the growth of high quality HgCdTe epi materials. The InSb substrate will be prepared via production III-V Molecular Beam Epitaxy (MBE) reactor. The 211B InSb substrate is chosen because it''s lattice matched to HgCdTe. Texas State University and Teledyne will assist with the growth of HgCdTe on the especially prepared InSb substrate for evaluation of the InSb substrate preparation. Materials characterization will be performed to evaluate the quality of HgCdTe epi materials grown on InSb. Critical materials development issues will be identified.

* information listed above is at the time of submission.

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