Electrically-Pumped III-Nitride Intersubband lasers

Award Information
Agency:
Department of Defense
Branch
n/a
Amount:
$749,975.00
Award Year:
2010
Program:
SBIR
Phase:
Phase II
Contract:
D11PC20027
Award Id:
91817
Agency Tracking Number:
08SB2-0764
Solicitation Year:
2008
Solicitation Topic Code:
SB082-049
Solicitation Number:
2008.2
Small Business Information
Kyma Technologies, Inc. (Currently Kyma Technologies)
8829 Midway West Road, Raleigh, NC, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
020080607
Principal Investigator:
Tania Paskova
Chief Scientist
(919) 789-8880
paskova@kymatech.com
Business Contact:
Carole Davis
Contract Administrator
(919) 789-8880
davis@kymatech.com
Research Institution:
n/a
Abstract
Kyma Technologies, a leading supplier of low defect density GaN substrates, is teamed together with the three subcontractors at Princeton University, Lehigh University and Purdue University where some of the best lattice-matched quaternary (In,Ga,Al)N or ternary structures in the world have been produced, to propose the development of the worlds first high-performance III-N quantum cascade lasers operating in the 1.55-micron region. Phase I was focused on development of multi-quantum well pseudomorphically grown structures on low-defect density bulk GaN substrates, showing strong intersubband absorption near 2 fYm and thus demonstrated feasibility and laid the foundation for Phase II wherein high quality 1.55 fYm QCLs will be developed. The diverse and highly complimentary team formed for this effort has shown excellent results in the timeframe of Phase 1 project and intent to employ in a potential Phase 2 effort a multipronged and novel technical approach which examines both polar and non-polar substrate orientations, benefits from optimization of substrate surface mis-orientation(s), and employs strain-compensation heterostructure engineering to enable the development of state-of-the-art epitaxial wafer designs with ultra-high structural quality. A 3-pronged commercialization path benefiting from simultaneous market connection at the substrate, epiwafer, and device levels ensures rapid commercial adoption of this exciting new technology.

* information listed above is at the time of submission.

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