Electrically-Pumped III-Nitride Intersubband lasers

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: D11PC20027
Agency Tracking Number: 08SB2-0764
Amount: $749,975.00
Phase: Phase II
Program: SBIR
Awards Year: 2010
Solicitation Year: 2008
Solicitation Topic Code: SB082-049
Solicitation Number: 2008.2
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road, Raleigh, NC, -
DUNS: 020080607
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Tania Paskova
 Chief Scientist
 (919) 789-8880
Business Contact
 Carole Davis
Title: Contract Administrator
Phone: (919) 789-8880
Email: davis@kymatech.com
Research Institution
Kyma Technologies, a leading supplier of low defect density GaN substrates, is teamed together with the three subcontractors at Princeton University, Lehigh University and Purdue University where some of the best lattice-matched quaternary (In,Ga,Al)N or ternary structures in the world have been produced, to propose the development of the world¡¦s first high-performance III-N quantum cascade lasers operating in the 1.55-micron region. Phase I was focused on development of multi-quantum well pseudomorphically grown structures on low-defect density bulk GaN substrates, showing strong intersubband absorption near 2 ƒÝm and thus demonstrated feasibility and laid the foundation for Phase II wherein high quality 1.55 ƒÝm QCLs will be developed. The diverse and highly complimentary team formed for this effort has shown excellent results in the timeframe of Phase 1 project and intent to employ in a potential Phase 2 effort a multipronged and novel technical approach which examines both polar and non-polar substrate orientations, benefits from optimization of substrate surface mis-orientation(s), and employs strain-compensation heterostructure engineering to enable the development of state-of-the-art epitaxial wafer designs with ultra-high structural quality. A 3-pronged commercialization path benefiting from simultaneous market connection at the substrate, epiwafer, and device levels ensures rapid commercial adoption of this exciting new technology.

* information listed above is at the time of submission.

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