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Scalable Single- and Multi-"Boule"Bulk GaN Substrate HVPE Production Tool

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-13-P-0001
Agency Tracking Number: T122-001-0139
Amount: $150,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: DTRA122-001
Solicitation Number: 2012.2
Solicitation Year: 2012
Award Year: 2013
Award Start Date (Proposal Award Date): 2013-02-01
Award End Date (Contract End Date): 2013-08-31
Small Business Information
201 Circle Drive North Unit # 102
Piscataway, NJ -
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Gary Tompa
 (732) 302-9274
Business Contact
 Gary Tompa
Title: President
Phone: (732) 302-9274
Research Institution

GaN-based devices are currently grown on foreign substrates such as SiC and Al2O3, due to the lack of high quality GaN substrates. It is well known that the use of foreign substrates limits device performance due to a high dislocation density in the GaN film. Structured Materials Industries, Inc. (SMI) has developed a hybrid HVPE approach to grow high quality GaN device films. In this SBIR project, SMI will work with a leading University research center, to implement cost effective processes for growth of GaN crystal boules and processing to polished wafers. Phase I will build on existing results to prove the approach can concurrently produce thick multiple 2"or 4"diameter boules of low defect semi-insulating (or doped as desired) GaN wafers merged with cutting and polishing processes. Phase II will establish pilot production of multiple 2"and 4"GaN boules, and processing to polished wafers. Also in Phase II, GaN devices will be fabricated on the resulting wafers, as a test and demonstration of the material quality. Phase III will consist of selling the finished materials and production tooling.

* Information listed above is at the time of submission. *

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