Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

Award Information
Agency:
Department of Defense
Branch
Army
Amount:
$519,799.00
Award Year:
2013
Program:
SBIR
Phase:
Phase II
Contract:
W911NF-13-C-0074
Agency Tracking Number:
A2-5337
Solicitation Year:
2012
Solicitation Topic Code:
A12-024
Solicitation Number:
2012.1
Small Business Information
IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103, Costa Mesa, CA, -
Hubzone Owned:
N
Minority Owned:
Y
Woman Owned:
N
Duns:
830609090
Principal Investigator:
Honnavalli Vydyanath
Chief Scientist
(714) 717-6675
hvydyanath@gmail.com
Business Contact:
Honnavalli Vydyanath
President
(714) 717-6675
hvydyanath@gmail.com
Research Institution:
Stub




Abstract
The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goal to demonstrate our approach to reduce the dislocation density to ~1x105 cm-2 and lower in LWIR HgCdTe epitaxial layers grown on Si substrates with a cut off wavelength of ~10µm at 77 K. At the end of the Phase II effort, the goal is to demonstrate fabrication of focal plane arrays of up to 2Kx2K size in Si substrate based LWIR HgCdTe, with new state of the art in detectivity performance, uniformity, operability and producibility.

* information listed above is at the time of submission.

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