Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates

Award Information
Agency: Department of Defense
Branch: Army
Contract: W911NF-13-C-0074
Agency Tracking Number: A2-5337
Amount: $519,799.00
Phase: Phase II
Program: SBIR
Awards Year: 2013
Solicitation Year: 2012
Solicitation Topic Code: A12-024
Solicitation Number: 2012.1
Small Business Information
IRDT Solutions, Inc
2850 Mesa Verde Drive East, Unit 103, Costa Mesa, CA, 92626
DUNS: 000000000
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: Y
Principal Investigator
 Honnavalli Vydyanath
 Chief Scientist
 (714) 717-6675
 hvydyanath@gmail.com
Business Contact
 Honnavalli Vydyanath
Title: President
Phone: (714) 717-6675
Email: hvydyanath@gmail.com
Research Institution
 Stub
Abstract
The technical objective of the Phase II effort is to implement the ideas developed in Phase I work to improve the thermal cycle annealing procedures and HgCdTe epitaxial growth procedures with the goal to demonstrate our approach to reduce the dislocation density to ~1x105 cm-2 and lower in LWIR HgCdTe epitaxial layers grown on Si substrates with a cut off wavelength of ~10 m at 77 K. At the end of the Phase II effort, the goal is to demonstrate fabrication of focal plane arrays of up to 2Kx2K size in Si substrate based LWIR HgCdTe, with new state of the art in detectivity performance, uniformity, operability and producibility.

* information listed above is at the time of submission.

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