High-quality, low-cost GaN single crystal substrates for high-power devices

Award Information
Agency: Department of Energy
Branch: ARPA-E
Contract: DE-AR0000448
Agency Tracking Number: 0941-1506
Amount: $225,000.00
Phase: Phase I
Program: SBIR
Awards Year: 2013
Solicitation Year: 2013
Solicitation Topic Code: 1
Solicitation Number: N/A
Small Business Information
Fairfield Crystal Technology
8 South End Plaza, New Milford, CT, 06776-
DUNS: 168455116
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Shaoping Wang
 Vice President
 (860) 354-2111
 swang@fairfieldcrystal.com
Business Contact
 Andrew Timmerman
Phone: (860) 354-2111
Email: atimmerman@fairfieldcrystal.com
Research Institution
N/A
Abstract
The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior crystal quality. The novel GaN crystal growth technique can achieve a growth rate significantly higher than that can be achieved using any existing GaN crystal growth technique, including a state-of-the-art hydride vapor phase expitaxy (HVPE) technique. As a result, GaN single crystal boules and wafers will be produced at a low cost and at a high throughput. The novel GaN growth technique, by design, has the capability to reduce dislocation densities to less than 10E4 cm-2 in GaN crystal boules, which enables fabrication of high-performance GaN high-power devices. In addition, the novel growth technique is scalable to produce GaN single crystal boules and wafers of large diameters. Fairfield Crystal team will grow GaN single crystal boules and then fabricate GaN wafers. Stony Brook University Team will conduct crystal defect characterization using variety of tools, including Synchrotron X-ray Topography.

* information listed above is at the time of submission.

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