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Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)

Award Information
Agency: Department of Energy
Branch: ARPA-E
Contract: DE-AR0000442 
Agency Tracking Number: 0941-1514
Amount: $225,000.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: 1
Solicitation Number: N/A
Timeline
Solicitation Year: 2013
Award Year: 2013
Award Start Date (Proposal Award Date): 2014-01-01
Award End Date (Contract End Date): N/A
Small Business Information
101 E. State Street, The Commons #198, Ithaca, NY, 14850-
DUNS: 78655022
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Kevin Matocha
 President
 (518) 986-0696
 kmatocha@monolithsemi.com
Business Contact
 Kevin Matocha
Phone: (518) 986-0696
Email: kmatocha@monolithsemi.com
Research Institution
N/A
Abstract
The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is uniquely positioned to develop designs and processing techniques suitable for the existing 150mm silicon foundry at X-FAB Texas. To reduce the manufacturing cost of SiC MOSFETs, Monolith and X-FAB will develop SiC processing techniques that utilize X-FAB’s existing toolset. Monolith Semiconductor and Rensselaer will design advanced three-dimensional SiC MOSFET cell designs utilizing X-FAB’s high yielding (greater than 95%) design rules and processes to achieve less than 2 mOhm-cm2 specific on-resistance. United Technologies will provide characterization and application feedback, demonstrating a 40kW boost converter operating at a switching frequency greater than 50 kHz. In collaboration with Univ. of Arkansas, we will fabricate SiC MOSFETs suitable for double-side cooling to further increase power density. By these combined advances in process simplicity, high-yield manufacturing and low-specific on-resistance, we will demonstrate 100Amp 1200V SiC MOSFETs that can be manufactured in volume at less than 5 cents per Amp.

* Information listed above is at the time of submission. *

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