Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,933.00
Award Year:
2010
Program:
SBIR
Phase:
Phase I
Contract:
NNX10CE99P
Award Id:
95557
Agency Tracking Number:
095532
Solicitation Year:
n/a
Solicitation Topic Code:
X1
Solicitation Number:
n/a
Small Business Information
P.O. Box 19325, Portland, OR, 97280
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
142981153
Principal Investigator:
Jim Holmes
Principal Investigator
(479) 575-9222
holmes@lynguent.com
Business Contact:
Martin Vlach
CEO
(503) 241-7195
mvlach@lynguent.com
Research Institute:
n/a
Abstract
State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process offer inherent advantages for operation in radiation environments where single event transient and total iodization dose effects on the circuit are important. Recent access to libraries of wide temperature and RHBD BiCMOS designs provide the reference data for developing radiation aware automation design automation. Lynguent's efficiency gains in compact model composition have enabled radiation domain experts to transfer observed radiation effects from TCAD simulators into the commercial circuit simulators. These compact models are augmented with radiation effects such as the ISDE 90 nm Bulk CMOS Bias Dependent Charge Sharing SET Effect. These rad-aware models are used within the LynRad Fault Analyzer, taking into account circuit schematics, layout and cosmic ray scenarios. Extending this design automation to a BiCMOS AMS designs is the logical next step in establishing radiation awareness over wide temperature. Previous investigations were limited to circuits with a small number of transistors that could be simulated in mixed TCAD-SPICE environments. Consequently, scaling the LynRad Radiation Fault Analyzer to larger, more complex AMS circuits is a key aspect of this investigation.

* information listed above is at the time of submission.

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