Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX10CE99P
Agency Tracking Number: 095532
Amount: $99,933.00
Phase: Phase I
Program: SBIR
Awards Year: 2010
Solitcitation Year: N/A
Solitcitation Topic Code: X1
Solitcitation Number: N/A
Small Business Information
Lynguent, Inc.
P.O. Box 19325, Portland, OR, 97280
Duns: 142981153
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jim Holmes
 Principal Investigator
 (479) 575-9222
 holmes@lynguent.com
Business Contact
 Martin Vlach
Title: CEO
Phone: (503) 241-7195
Email: mvlach@lynguent.com
Research Institution
N/A
Abstract
State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process offer inherent advantages for operation in radiation environments where single event transient and total iodization dose effects on the circuit are important. Recent access to libraries of wide temperature and RHBD BiCMOS designs provide the reference data for developing radiation aware automation design automation. Lynguent's efficiency gains in compact model composition have enabled radiation domain experts to transfer observed radiation effects from TCAD simulators into the commercial circuit simulators. These compact models are augmented with radiation effects such as the ISDE 90 nm Bulk CMOS Bias Dependent Charge Sharing SET Effect. These rad-aware models are used within the LynRad Fault Analyzer, taking into account circuit schematics, layout and cosmic ray scenarios. Extending this design automation to a BiCMOS AMS designs is the logical next step in establishing radiation awareness over wide temperature. Previous investigations were limited to circuits with a small number of transistors that could be simulated in mixed TCAD-SPICE environments. Consequently, scaling the LynRad Radiation Fault Analyzer to larger, more complex AMS circuits is a key aspect of this investigation.

* information listed above is at the time of submission.

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