Efficient Manufacturing of Low Defect Density SiC Substrates using a Novel Defect Capped Planarization Assisted Growth (DC-PAG) Method

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$749,992.00
Award Year:
2014
Program:
SBIR
Phase:
Phase II
Contract:
FA8650-14-C-2426
Award Id:
n/a
Agency Tracking Number:
F121-183-0748
Solicitation Year:
2012
Solicitation Topic Code:
AF121-183
Solicitation Number:
2012.1
Small Business Information
1912 NW 67th Place, Gainesville, FL, -
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
Y
Duns:
024935517
Principal Investigator:
Arul Arjunan
Technology Manager
(352) 334-7270
arul@sinmat.com
Business Contact:
Deepika Singh
President&CEO
(352) 334-7237
singh@sinmat.com
Research Institution:
n/a
Abstract
ABSTRACT: Silicon carbide based power devices has several advantages because it can be used in very high power, high temperature, high frequency applications, where conventional silicon devices cannot be used. Despite significant advancement in SiC semiconductor technology in the past 3 decades, the presence of device killing defects in the epilayer has impeded the rapid commercialization of SiC-based power devices such as MOSFETs, bipolar-mode diodes and thyristors. Current state of the art methods to reduce these defects have made incremental progress and primarily rely on improvements in conventional growth techniques. A new substrate defect engineering technology has been proposed and demonstrated to reduce defects in SiC epilayers. The reduced defect density epilayers based on the defect engineered substrate will increase the performance SiC devices, device yield and hence can reduce the cost of manufacturing. BENEFIT: The high performance, low cost SiC devices will enable its applications in high power, high frequency and alternative energy applications. Silicon carbide (SiC) power devices can be used in applications such as solar inverters, power conversion in computing and network power supplies, variable-speed drives for industrial motors and hybrid electric vehicles, and products used in high-power, harsh-environment military and aerospace environments.

* information listed above is at the time of submission.

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