High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00024-14-C-4067
Agency Tracking Number: N121-071-1041
Amount: $1,499,625.00
Phase: Phase II
Program: SBIR
Awards Year: 2014
Solicitation Year: 2012
Solicitation Topic Code: N121-071
Solicitation Number: 2012.1
Small Business Information
3400 Industrial Lane Unit 7, Broomfield, CO, 80020
DUNS: 100363857
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Ofer Sneh
 (303) 466-2341
Business Contact
 Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Research Institution
This project targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, the objective of this project is to provide a higher dielectric constant substitution for currently used dielectric layers, as well as to integrate high work-function metal electrodes and 3D capacitor design. The project intends to develop MIM capacitors with leakage current 200 V operation voltage, 500 pF/mm2 capacitance density and >107 hours MTTF at 50 V and 125 deg C operation temperature.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government