High Voltage Metal Insulator Metal (MIM) Capacitor Technology

Award Information
Agency:
Department of Defense
Branch:
Navy
Amount:
$1,499,625.00
Award Year:
2014
Program:
SBIR
Phase:
Phase II
Contract:
N00024-14-C-4067
Agency Tracking Number:
N121-071-1041
Solicitation Year:
2012
Solicitation Topic Code:
N121-071
Solicitation Number:
2012.1
Small Business Information
Sundew Technologies, LLC
3400 Industrial Lane Unit 7, Broomfield, CO, 80020
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
100363857
Principal Investigator
 Ofer Sneh
 President
 (303) 466-2341
 ofer@sundewtech.com
Business Contact
 Anat Sneh
Title: Vice President
Phone: (303) 466-2341
Email: anat@sundewtech.com
Research Institution
N/A
Abstract
This project targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, the objective of this project is to provide a higher dielectric constant substitution for currently used dielectric layers, as well as to integrate high work-function metal electrodes and 3D capacitor design. The project intends to develop MIM capacitors with leakage current 200 V operation voltage, 500 pF/mm2 capacitance density and >107 hours MTTF at 50 V and 125 deg C operation temperature.

* information listed above is at the time of submission.

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