High Voltage Metal Insulator Metal (MIM) Capacitor Technology
Small Business Information
3400 Industrial Lane, Unit 7, Broomfield, CO, 80020-
AbstractThis project targets the development of commercially viable Atomic Layer Deposition (ALD) process for the manufacturing of high voltage metal-insulator-metal (MIM) capacitors for gallium nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) applications. In particular, the objective of this project is to provide a higher dielectric constant substitution for currently used dielectric layers, as well as to integrate high work-function metal electrodes and 3D capacitor design. The project intends to develop MIM capacitors with leakage current 200 V operation voltage, 500 pF/mm2 capacitance density and>107 hours MTTF at 50 V and 125 deg C operation temperature.
* information listed above is at the time of submission.