Innovative Pulsing Technique to estimate junction temperature in Wide-bandgap devices

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$68,786.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
N65538-08-M-0129
Award Id:
87798
Agency Tracking Number:
N082-164-0537
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
11870 Community Road, Poway, CA, 92064
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
132355582
Principal Investigator:
Roland Shaw
President
(858) 332-0707
rws@accelrf.com
Business Contact:
Ronald Vener
Director of Sales and Marketing
(858) 332-0707
rvener@accelrf.com
Research Institution:
n/a
Abstract
A simple and reliable method to estimate the channel temperature of GaN high electron mobility transistors (HEMT) is proposed. The technique is based on electrical measurements of performance related figures of merit (IDmax and RON) with a synchronized pulsed I-V setup. As our technique involves only electrical measurement, no special design in device geometry is required and packaged devices can be measured.

* information listed above is at the time of submission.

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