Innovative Pulsing Technique to estimate junction temperature in Wide-bandgap devices

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N65538-08-M-0129
Agency Tracking Number: N082-164-0537
Amount: $98,688.00
Phase: Phase I
Program: SBIR
Awards Year: 2008
Solitcitation Year: 2008
Solitcitation Topic Code: N08-164
Solitcitation Number: 2008.2
Small Business Information
ACCEL-RF CORP.
11870 Community Road, Poway, CA, 92064
Duns: 132355582
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Roland Shaw
 President
 (858) 332-0707
 rws@accelrf.com
Business Contact
 Ronald Vener
Title: Director of Sales and Marketing
Phone: (858) 332-0707
Email: rvener@accelrf.com
Research Institution
N/A
Abstract
A simple and reliable method to estimate the channel temperature of GaN high electron mobility transistors (HEMT) is proposed. The technique is based on electrical measurements of performance related figures of merit (IDmax and RON) with a synchronized pulsed I-V setup. As our technique involves only electrical measurement, no special design in device geometry is required and packaged devices can be measured.

* information listed above is at the time of submission.

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