Kyma Technologies, Inc.

Address

8829 Midway West Road
Raleigh, NC, 27617-4606

Information

DUNS: 020080607
# of Employees: 17

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics

    Amount: $79,994.00

    High power, high voltage switching via semiconductor materials is attractive from a size, weight, and profile perspective. The Baliga figure of merit for high voltage for Ga2O3 is 3,415 (relative to S ...

    STTRPhase I2016Department of Defense
  2. FLAAT Growth Technology for Low-Cost, Thick, High-Quality GaN on 6¿Sapphire with No Wafer Bow

    Amount: $1,000,000.00

    The use of non-native substrates for GaN-based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow ...

    SBIRPhase II2016Department of Energy
  3. AlN-Based Power Electronics Device Epiwafer Manufacturing

    Amount: $150,000.00

    Crystalline aluminum nitride AlN) materials have the potential to support a new generation of ultra-high performance power electronics. While great progress has been realized in producing high structu ...

    SBIRPhase I2015Department of Energy
  4. GaN for High Rep Rate Pulsed Power

    Amount: $80,000.00

    Kyma will develop and model a modular high rep rate (>100kHz) photoconductive switch using GaN and commercial-off-the-shelf laser diodes. The switch will be designed to switch >1.5kV at >150A in 5-10n ...

    STTRPhase I2015Department of Defense
  5. Cost Effective GaN on Diamond Template Manufacturing

    Amount: $149,950.00

    Kyma Technologies proposes an innovative approach to grow device-quality single crystal GaN on polycrystalline diamond substrates. The result is a GaN-on-diamond template that can be inserted directly ...

    SBIRPhase I2015Department of Defense Navy
  6. Millimeter Thick, Periodically Oscillating Polarity GaN Grown via HVPE

    Amount: $771,566.00

    Gallium Nitride is a wide bandgap, highly transparent material with a second order non-linear susceptibility similar to that of LiNbO3 with high thermal conductivity. As such, it is of interest for us ...

    SBIRPhase II2015Department of Defense Navy
  7. FLAAT Growth Technology for Low Cost Thick High Quality GaN on Thin 8 Sapphir

    Amount: $1,000,000.00

    The use of non-native substrates for GaN- based devices leads to devices with high densities of defects stemming from misfit dislocation formation due to lattice mismatch and large values of wafer bow ...

    SBIRPhase II2014Department of Energy
  8. Low Power Monolayer MoS2 Transistors for RF Applications

    Amount: $150,000.00

    Utilizing a novel solid/gas source CVD reactor designed for the growth of large area (substrates up to 4"in diameter) MoS2 single layer (SL) and multiple layer (ML) films, and leveraging already ...

    STTRPhase I2014Army Department of Defense
  9. GaN Substrate Technology

    Amount: $225,000.00

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a s ...

    SBIRPhase I2014ARPA-E Department of Energy
  10. GaN Substrate Technology

    Amount: $1,499,816.00

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a s ...

    SBIRPhase II2014ARPA-E Department of Energy

Agency Micro-sites

US Flag An Official Website of the United States Government