High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices
Small Business Information
535 W. Research Center Blvd., Fayetteville, AR, 72701-6559
AbstractIn this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC application specific integrated circuit (ASIC) gate driver. The fabricated SiC ASIC gate driver will then be integrated into an APEI, Inc. power module, providing for a next generation smart power module solution.
* information listed above is at the time of submission.