High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$999,996.27
Award Year:
2014
Program:
SBIR
Phase:
Phase II
Contract:
DE-SC0010093
Agency Tracking Number:
213872
Solicitation Year:
2014
Solicitation Topic Code:
08d
Solicitation Number:
DE-FOA-0001072
Small Business Information
Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd., Fayetteville, AR, 72701-6559
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
Brett Sparkman
Mr.
(479) 443-5759
bsparkm@apei.net
Business Contact:
Sharmila Mounce
Mrs.
(479) 443-5759
smounce@apei.net
Research Institution:
Stub




Abstract
In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC application specific integrated circuit (ASIC) gate driver. The fabricated SiC ASIC gate driver will then be integrated into an APEI, Inc. power module, providing for a next generation smart power module solution.

* information listed above is at the time of submission.

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