High Temperature (300c) Silicon Carbide (SiC)-Based Integrated Gate Drivers for Wide Bandgap Power Devices

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$999,996.27
Award Year:
2014
Program:
SBIR
Phase:
Phase II
Contract:
DE-SC0010093
Award Id:
n/a
Agency Tracking Number:
213872
Solicitation Year:
2014
Solicitation Topic Code:
08d
Solicitation Number:
DE-FOA-0001072
Small Business Information
535 W. Research Center Blvd., Fayetteville, AR, 72701-6559
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
121539790
Principal Investigator:
Brett Sparkman
Mr.
(479) 443-5759
bsparkm@apei.net
Business Contact:
Sharmila Mounce
Mrs.
(479) 443-5759
smounce@apei.net
Research Institution:
Stub




Abstract
In this Phase II proposal, APEI, Inc. will continue development of its patented high temperature gate driver technology, enabling the next generation of high-efficiency, high power density converters. At the conclusion of Phase II, APEI, Inc. will have designed, fabricated, and tested a high temperature (300 C) SiC application specific integrated circuit (ASIC) gate driver. The fabricated SiC ASIC gate driver will then be integrated into an APEI, Inc. power module, providing for a next generation smart power module solution.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government