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Nanostructured ZnO for Rad-Hard Microelectronics Components

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-14-P-0006
Agency Tracking Number: T133-001-0036
Amount: $149,928.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: DTRA133-001
Solicitation Number: 2013.3
Solicitation Year: 2013
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-06-15
Award End Date (Contract End Date): 2015-01-14
Small Business Information
44 Hunt Street, Watertown, MA, 02472-4699
DUNS: 073804411
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Zsolt Marton
 Principal Investigator
 (617) 668-6801
Business Contact
 Joanne Gladstone
Title: Vice President of Operations
Phone: (617) 668-6801
Research Institution
ABSTRACT: This project is aiming at developing basic semiconductor components (field-effect transistors) that will be deployed in highly radioactive environment (nuclear plants, space, radioactive waste storage facilities). Radiation Monitoring Devices (RMD), Inc. BENEFITS: ANTICIPATED BENEFITS This new concept of radiation-hard microelectronics will be compatible with recent IC technology in terms of production. These novel, wide-bandgap semiconductor devices could be deployed and reliably used for a long period of time in

* Information listed above is at the time of submission. *

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