Metal-Oxides as Radiation-Hard Microelectronic Channel Materials

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA1-14-P-0004
Agency Tracking Number: T133-001-0056
Amount: $149,972.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: DTRA133-001
Solicitation Number: 2013.3
Timeline
Solicitation Year: 2013
Award Year: 2014
Award Start Date (Proposal Award Date): 2014-06-25
Award End Date (Contract End Date): 2015-01-24
Small Business Information
22207 Linda Drive, Torrance, CA, 90505-
DUNS: 808035930
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Christopher Rutherglen
 Principal Scientist
 (310) 983-3048
 chris@aneeve.com
Business Contact
 Kosmas Galatsis
Title: Managing Member
Phone: (310) 874-3024
Email: kos@aneeve.com
Research Institution
N/A
Abstract
ABSTRACT: Metal-oxide devices offer power dissipation advantages such as low standby power dissipation, better defect resilience versus silicon, superior electronic and magnetic properties, and are broadly Si compatible hence their attractiveness and candidacy fo BENEFITS: Radiation hardened microelectronics are critical for future Department of Defense (DoD) systems where devices are required to function in high radiation environments. Environments with high levels of ionizing radiation can cause both single event effects

* Information listed above is at the time of submission. *

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